一种无基准源的欠压保护电路设计
首发时间:2025-04-23
摘要:电源欠压问题由电池老化、负载突变或环境干扰等因素引发,可能导致逻辑电路失效、数据丢失甚至硬件损坏,因此亟需高效的欠压保护机制。传统的欠压保护电路依赖带隙基准源设定基准参考电压,存在电路结构复杂、静态功耗高及成本较高等缺陷,难以满足低功耗应用场景需求。本文基于0.35μm BCD工艺,提出一种无基准源欠压保护电路设计方案,通过比较两路不同斜率的采样电压实现阈值检测,无需依赖带隙基准电路生成基准参考电压,具有电路结构简单,静态功耗低,工艺兼容性好等优势,可应用于低成本、低功耗场景下的功率管理集成电路。仿真结果表明:在20V电源场景下,电路的封锁阈值电压为12V,恢复阈值电压为12.54V,滞回电压区间为0.54V。
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Design of a Shot-voltage Safeguard Circuit without Reference Source
Abstract:Undervoltage issues in power systems, caused by battery aging, load transients, or environmental disturbances, may lead to logic circuit failures, data loss, or hardware damage, thereby necessitating highly efficient undervoltage protection mechanisms. Conventional undervoltage protection circuits, which rely on bandgap references to establish reference voltages, suffer from structural complexity, excessive static power consumption, and high implementation costs, making them unsuitable for low-power applications. This paper proposes a reference-free undervoltage protection circuit design based on 0.35 μm BCD technology. By comparing two sampling voltages with distinct slopes for threshold detection, the proposed architecture eliminates the need for bandgap reference circuits while offering simplified circuitry, significantly reduced static power consumption, and excellent process compatibility. The design is particularly suited for cost-sensitive, low-power power management integrated circuits. Simulation results demonstrate that under a 20 V supply voltage, the circuit achieves a lockout threshold voltage of 12 V, a recovery threshold voltage of 12.54 V, and a hysteresis voltage interval of 0.54 V.
Keywords: Integrated Circuit Undervoltage Protection BCD Technology
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