Ion-Migration-Enabled Scaling of Halide Perovskite Devices: Mechanisms, Architectures, and Prospects

• 1、School of Integrated Circuits, Dalian University of Technology, Dalian 116620

Abstract：Halide perovskite materials have emerged as a research hotspot in optoelectronics due to their tunable bandgaps and superior charge carrier mobilities. Studies reveal that their ionic migration behavior exhibits a dual-edged sword effect: while triggering interfacial degradation that deteriorates device performance, it simultaneously enables dynamic ionic reconstruction to confer tunable optoelectronic properties. In this work, high-quality CsPbBr? single-crystalline nanowires (diameters: 100 nm-2000 nm, lengths >20 μm) were fabricated via chemical vapor deposition (CVD) for systematic investigation of ionic migration effects at submicron scales. Under electric field poling at 3 V/μm, the nanowire devices demonstrated pronounced ion-migration-induced photovoltaic effects, generating a short-circuit current of 3.00 nA and an open-circuit voltage of 0.55 V. Further investigations revealed that the I-V hysteresis characteristics of polarized CsPbBr? nanowires align with the threshold switching behavior of resistive random-access memory (RRAM), enabling the construction of submicron-scale nonvolatile memory cells. These findings not only deepen the understanding of ionic dynamics in perovskites but also provide critical insights for developing novel reconfigurable optoelectronic devices.

Keywords： Halide perovskites Nanowires Ion migration Energy storage devices RRAM