基于6T SRAM的存内加法电路结构设计
首发时间:2025-02-19
摘要:提出了一种新型存内计算电路结构能够在6T SRAM存储器中实现全加器功能,并在多位计算时提供灵活的跳位逻辑运算。设计采用多逻辑门组合扩展6T SRAM寄存器,同时给出了8位存内全加器的电路实现方案。此外,结合超前进位加法和自适应跳位逻辑设计,进一步提升了存内全加器的计算性能并实现了功耗平衡。在28nm CMOS工艺下,基于1.0V工作电压,8位6T SRAM存内全加器的典型工作延迟为129.6ps,吞吐量达到22.30GOPS。该设计方案在提升计算速度和功耗控制上取得了较好的平衡,在车载SoC高性能高计算与低功耗要求有显著优势。
关键词: 存内计算 自适应进位管理 存内全加器 6T SRAM
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An In-Memory Computing Full Adder Design Based 6T SRAM
Abstract:In this paper a new memory computing circuit structure is proposed, which can realize the function of full adder in 6T SRAM memory and provide flexible hop logic operation in multi-bit computing. The 6T SRAM register is designed and extended by multi-logic gate combination, and the circuit implementation of 8-bit memory full adder is presented. In addition, combined with the innovative design of advance carry addition and adaptive skip logic, the computing performance of the memory full adder is further improved and the power balance is achieved. In the 28nm CMOS process, based on 1V operating voltage, the typical operating delay of the 8-bit 6T SRAM memory full adder is 129.6 ps and the throughput reaches 22.30GOPS. The design scheme achieves a good balance in improving the computing speed and power consumption control, and has significant advantages in the requirements of high performance, high computing and low power consumption of on-board SOCs.
Keywords: In memory computing Adaptive carry management In memory full adder 6T SRAM
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