Study of β-Ga2O3 Solar-Blind UV Alpha Particle Detector

• 1、School of Integrated Circuits, Dalian University of Technology, Dalian 116620

Abstract：In this paper, we report β-Ga2O3 based solar-blind Schottky diode α particle detector. The 20 μm unintentionally doped β-Ga2O3 drift region was synthesized by HVPE on n+ β-Ga2O3 substrate. XRD rocking curve revealed high crystalline quality with a narrow FWHM of 45.15 arcsec for the (002) diffraction peak. The bandgap of as-grown sample estimated by absorption spectroscopy was at around 4.74 eV within the solar-blind region. 3 mm×3 mm square β-Ga2O3-based vertical detectors were realized by depositing Ni/Au Schottky contacts on drift region and Ti/Au ohmic contacts on substrate, respectively. Detection of 241Am α particle was performed under various reverse bias reaching 33% for energy resolution and 90% for charge collection efficiency at -140 V. The measurement under 365 nm illumination indicated strongly near UV resistance for β-Ga2O3 based detector compared with SiC based detector. These results demonstrate promisinge of solar-blind α particle detection in field environments by β-Ga2O3 detectors.

Keywords： β-Ga2O3 α Particle detection Energy resolution Electric charge collection rate