CNT/MoS2混合维度异质结场效应晶体管
首发时间:2023-04-27
摘要:碳纳米管(CNT)作为一种典型的一维纳米材料,具有诸多独特物理特性,电子在CNT中以弹道形式传输,经常被应用于电子及相关光电器件。二维过渡金属硫族化合物(TMD)因为其独特的层状结构、表面无悬键、带隙大小随厚度变化而变化等与传统材料相比独有的优点,近年来被广泛应用于电子和光电器件当中。本文采用一维碳纳米管和二维二硫化钼,利用一维碳纳米管的弹道输运特点以及二硫化钼的天然层状结构,制备混合维度异质结场效应晶体管。器件表现出良好的电学特性,开关比达到1000,最小亚阈值摆幅值低至0.95 V/dec,且转移曲线出现负跨导。
关键词: 微电子学与固体电子学 场效应晶体管 学碳纳米管 二硫化钼 异质结
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CNT/MoS2 Hybrid-Dimensional Heterojunction Field Effect
Abstract:Carbon nanotube (CNT) , as a typical 1D nanomaterial, has many unique physical characteristics. The electrons transport in the CNT is in ballistic form. Therefore, CNT is also often applied in electronic and optoelectronic devices. Two-dimensional transition metal dichalcogenides(TMD) have been widely used in electronic and optoelectronic devices in recent years because of their unique advantages compared with traditional materials, such as unique layered structure, no dangling bonds on the surface, and band gap varying with thickness. In this paper, the ballistic transport of CNT and the natural layered structure of the molybdenum disulfide will be used to fabricate the hybrid-dimensional CNT/MoS2 heterojunction field effect transistor. The device shows good electrical characteristics, with a switching ratio of 1000 and a minimum sub-threshold swing of 0.95 V/dec. Negative transconductance emerges in the transfer characteristic curve.
Keywords: Microelectronics and Solid State Electronics Field Effect Transistor Carbon nanotube Molybdenum disulfide heterojunction
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CNT/MoS2混合维度异质结场效应晶体管
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