High Performance Short-Channel-Length Ge pMOSFET with NiGe Souree/Drian Fabricated by Microwave Annealing

• 1、the College of Electronic Engineering and Information, Zhejiang University, Hangzhou, Zhejiang, 310027

Abstract：The superior ultra-shallow NiGe/n-Ge Schottky junctions have been fabricated by a microwave annealing technique. The impacts of different annealing technology on the electrical properties of NiGe/n-Ge Schottky junctions were systematically investigated. It is found that microwave annealing could alleviates the interface defects induced Fermi level pinning effect significantly. Thus, the Schottky barrier height for hole have beendecreased to 0.03 eV. As a result, the junction leakage of the NiGe metal source/drain has been sufficiently reduced. In addition, since the microwave annealing technique has the low temperature budget, the junction depth of NiGe/n-Ge Schottky junction fabricated by microwave annealingwas ultra-shallow, ~24 nm. Furthermore,the high performance Schottky-barrier Ge p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been revealed with the NiGe metal source/drain formed by microwave annealing, with an enhanced ON current and a high on/off ratio of four orders of magnitude.

Keywords： Microelectronics, Germanium, MOSFET, Microwave Annealing, Metal Source/Drain, Short Channel Length