光催化辅助抛光单晶硅的抛光液研制
首发时间:2017-05-18
摘要::随着电子信息技术高速发展,集成电路等电子元件大量应用,如何高效获取超平坦晶圆已成为当前的主要研究方向。为实现硅晶圆全局平坦化,同时针对目前化学机械抛光硅时存在的抛光液不易存储、污染环境等问题,提出全新的光催化辅助抛光单晶硅方法,本文将主要研究其抛光液。首先,通过电化学方法表征溶液的氧化还原电位值,最后通过光催化辅助抛光单晶硅确定抛光液的有效性。试验结果:抛光液中添加二氧化钛、过氧化氢、磷酸与紫外光协同作用时氧化还原电位值最高。经7组试验对比,抛光液TiO2(P25)+H2O2+H3PO4+紫外光对单晶硅材料去除率最高(5.9mg/h),抛光后表面形貌最好。
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Preparation of slurry for photocatalytic assisted chemical mechanical silicon
Abstract:Electronic components such as integrated circuit are wildly applied with the development of electronic information technology, and how to effectively obtain flat wafer is becoming the main research direction. To realize the overall wafer planarization, a new monocrystalline silicon polishing method assisted by photocatalysis is proposed to solve the problems shcu as slurry storage difficulty and environment pollution in the silicon chemico-mechanical polishing process and the slurry will be mainly discussed in this article. Firstly, the oxidation-reduction potential of the solution is revealed by the electrochemical method. Finally, the monocrystalline silicon is polished assisted by photocatalysis to validate the effectiveness. The results show that the oxidation-reduction potential is maximized by adding TiO2, H2O2, H3PO4 to the slurry and collaborating with UV. Compared by 7 test groups, the slurry consisted of TiO2, H2O2, H3PO4 and UV can realize the maximum material removal rate to the monocrystalline silicon, and the surface morphology is most suitable with the requirement after polishing.
Keywords: chemical mechanical polishing silicon photocatalysis titanium dioxide
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